BF1118WR View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

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BF1118WR

Silicon RF switches

NXP Semiconductors. 

BF1118; BF1118R; BF1118W;

BF1118WR

Silicon RF switches

Rev. 1 — 29 June 2010

Product data sheet

1. Product profile

CAUTION

1.1 General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a

band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low

loss and high isolation capabilities of these devices provide excellent RF switching

functions. The gate of the MOSFET can be isolated from ground with the diode, resulting

in low losses. Integrated diodes between gate and source and between gate and drain

protect against excessive input voltage surges.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

„ Specially designed for low loss RF switching up to 1 GHz

1.3 Applications

„ Various RF switching applications such as:

‹ Passive loop through for VCR tuner

‹ Transceiver switching

1.4 Quick reference data

Table 1.

Symbol

Lins(on)

Quick reference data

Parameter

on-state insertion loss

ISLoff

off-state isolation

RDSon

VGS(p)

drain-source on-state resistance

gate-source pinch-off voltage

[1] IF = diode forward current.

Conditions

RS = RL = 50 Ω; f ≤ 1 GHz;

VSK = VDK = 0 V; IF = 0 mA

RS = RL = 50 Ω; f ≤ 1 GHz;

VSK = VDK = 3.3 V; IF = 1 mA

VKS = 0 V; ID = 1 mA

VDS = 1 V; ID = 20 μA

Min Typ Max Unit

[1] -

-

2.5 dB

30

-

-

dB

-

15

23.3 Ω

-

−2

−2.44 V

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