BF2030 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BF2030

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF2030...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

Gate1 input capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

gfs

Cg1ss

27 31

- mS

-

2.4 2.8 pF

Output capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 10 MHz

Cdss

-

1.3

-

Power gain

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

Gp

20 23

- dB

Noise figure

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

F

-

1.5 2.2 dB

Gain control range

VDS = 5 V, VG2S = 4...0 V, f = 800 MHz

∆Gp

40 50

-

3

2007-04-20

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