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BF2030 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BF2030
Infineon
Infineon Technologies Infineon
BF2030 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF2030...
AGC
G2
RF
G1
Input RG1
VGG
GND
Drain
RF Output
+ DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
Package
Pin Configuration
BF2030
SOT143 1= S 2=D 3=G2 4=G1 -
-
BF2030R
SOT143R 1= D 2=S 3=G1 4=G2 -
-
BF2030W
SOT343 1= D 2=S 3=G1 4=G2 -
-
Maximum Ratings
Parameter
Symbol
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF2030, BF2030R
TS 94 °C, BF2030W
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
1Pb-containing package may be available upon special request
Value
8
40
10
6
200
200
-55 ... 150
150
Marking
NDs
NDs
NDs
Unit
V
mA
V
mW
°C
1
2007-04-20
 

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