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BF247C View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF247C Datasheet PDF : 5 Pages
1 2 3 4 5
Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
drain-source voltage
IG
gate current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
up to Tamb = 50 °C
MIN.
65
MAX.
±25
10
400
+150
150
UNIT
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
VGS
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
IDSS
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
IGSS
gate leakage current
CONDITIONS
IG = 1 µA; VDS = 0
ID = 10 nA; VDS = 15 V
ID = 200 µA; VDS = 15 V
VGS = 0; VDS = 15 V; note 1
VGS = 15 V; VDS = 0
MIN.
25
0.6
1.5
3.0
5.5
30
60
110
Note
1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02.
TYP.
MAX.
14.5
UNIT
V
V
4.0
V
7.0
V
12.0 V
80
mA
140
mA
250
mA
5
nA
DYNAMIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis
Crs
Cos
yfs
fgfs
input capacitance
reverse transfer capacitance
output capacitance
forward transfer admittance
cut-off frequency
CONDITIONS
ID = 10 mA; f = 1 MHz; VDS = 15 V
ID = 10 mA; f = 1 MHz; VDS = 15 V
ID = 10 mA; f = 1 MHz; VDS = 15 V
ID = 10 mA; f = 1 kHz; VDS = 15 V
gfs = 0.7 of its value at 1 kHz; VGS = 0
MIN. TYP. MAX. UNIT
11
pF
3.5
pF
5
pF
8
17
mS
450
MHz
1996 Jul 29
3
 

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