BF1211R View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BF1211R Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
handbook,2h5alfpage
ID
(mA)
20
15
10
MDB829
(1)
(2)
(3)
(4)
(5)
(6)
5
0
0
0.5
(7)
1
1.5
2
2.5
VG1-S (V)
VDS = 5 V; Tj = 25 °C.
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
Fig.5 Transfer characteristics; typical values.
24
handbook, halfpage
ID
(mA)
16
8
MDB830
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
0
0
2
4 VDS (V) 6
VG2-S = 4 V; Tj = 25 °C.
(1) VG1-S = 1.5 V.
(2) VG1-S = 1.4 V.
(3) VG1-S = 1.3 V.
(4) VG1-S = 1.2 V.
(5) VG1-S = 1.1 V.
(6) VG1-S = 1 V.
(7) VG1-S = 0.9 V.
(8) VG1-S = 0.8 V.
Fig.6 Output characteristics; typical values.
handboo1k,0h0alfpage
IG1
(µA)
80
60
40
MDB831
(1)
(2)
(3)
(4)
(5)
(6)
20
(7)
0
0
0.5
1
1.5
2
VG1-S (V)
VDS = 5 V; Tj = 25 °C.
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
handbook,4h0alfpage
yfs
(mS)
30
20
(6)
(5)
10
MDB832
(1)
(2)
(3)
(4)
0
0
6
12
18
VDS = 5 V; Tj = 25 °C.
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
24
30
ID (mA)
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
Fig.8 Forward transfer admittance as a function
of drain current; typical values.
2003 Dec 16
6
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