BF1211R View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BF1211R Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
MDB828
(2)
(1)
100
150 Ts (°C) 200
(1) BF1211WR.
(2) BF1211; BF1211R.
Fig.4 Power derating curve.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
V(F)S-G1 forward source-gate 1 voltage
V(F)S-G2 forward source-gate 2 voltage
VG1-S(th) gate 1-source threshold voltage
VG2-S(th) gate 2-source threshold voltage
IDSX
drain-source current
IG1-S
IG2-S
gate 1 cut-off current
gate 2 cut-off current
Note
1. RG1 connects G1 to VGG = 5 V.
CONDITIONS
VG1-S = VG2-S = 0 V; ID = 10 µA
VG2-S = VDS = 0 V; IG1-S = 10 mA
VG1-S = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 100 µA
VG1-S = 5 V; VDS = 5 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 75 kΩ;
note 1
VG2-S = VDS = 0 V; VG1-S = 5 V
VG1-S = VDS = 0 V; VG2-S = 4 V
MIN.
6
6
6
0.5
0.5
0.3
0.35
11
MAX. UNIT
−
V
10
V
10
V
1.5 V
1.5 V
1
V
1
V
19
mA
−
50
nA
−
20
nA
2003 Dec 16
4
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