datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BF1211R View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF1211R
Philips
Philips Electronics Philips
BF1211R Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1211; BF1211R; BF1211WR
handbook, full pagewidth
VAGC
R1
10 k
C1
4.7 nF
RGEN
50
VI
C2
R2
50
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
2.2 µH
C4
RL
50
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s11
MAGNITUDE
(ratio)
0.987
0.985
0.979
0.965
0.949
0.929
0.904
0.876
0.846
0.816
0.791
ANGLE
(deg)
3.86
7.73
15.25
22.84
30.15
30.25
44.24
51.16
58.16
65.15
72.22
s21
MAGNITUDE
(ratio)
2.928
2.921
2.807
2.846
2.784
2.704
2.639
2.558
2.486
2.402
2.315
ANGLE
(deg)
175.8
171.6
163.2
155.0
146.7
138.9
130.9
123.0
115.1
107.2
99.9
s12
MAGNITUDE
(ratio)
0.0005
0.0010
0.0015
0.0028
0.0034
0.0037
0.0040
0.0039
0.0037
0.0032
0.0028
ANGLE
(deg)
89.3
86.9
91.1
77.4
74.0
71.4
69.6
69.0
70.0
74.5
87.1
s22
MAGNITUDE
(ratio)
0.993
0.993
0.993
0.988
0.985
0.981
0.976
0.971
0.965
0.960
0.956
ANGLE
(deg)
1.58
3.14
6.31
9.41
12.48
15.54
18.59
21.65
24.27
27.79
30.94
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
400
0.9
0.693
800
1.3
0.707
(deg)
16.75
37.33
Rn
()
29.85
29.90
2003 Dec 16
10
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]