BF1009SR View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BF1009SR

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

Thermal Resistance

Parameter

Channel - soldering point1)

BF1009S, BF1009SR

Symbol

Rthchs

BF1009S...

Value

Unit

≤ 370

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 500 µA, VG1S = 0 , VG2S = 0

Gate1-source breakdown voltage

+IG1S = 10 mA, VG2S = 0 , VDS = 0

Gate2 source breakdown voltage

±IG2S = 10 mA, VG1S = 0 , VDS = 0

Gate1-source leakage current

VG1S = 6 V, VG2S = 0

Gate 2 source leakage current

±VG2S = 8 V, VG1S = 0 , VDS = 0

Drain current

VDS = 9 V, VG1S = 0 , VG2S = 6 V

Operating current (selfbiased)

VDS = 9 V, VG2S = 6 V

Gate2-source pinch-off voltage

VDS = 9 V, ID = 500 µA

V(BR)DS

12

-

-V

+V(BR)G1SS 9

-

12

±V(BR)G2SS 9

-

12

+IG1SS

-

-

60 µA

±IG2SS

-

-

50 nA

IDSS

-

- 500 µA

IDSO

10 13 16 mA

VG2S(p)

-

0.9

-V

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

2007-04-20

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