BF1005SW View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

BF1005SW

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF1005S...

Electrical Characteristics

Parameter

Symbol

AC Characteristics (verified by random sampling)

Forward transconductance

gfs

VDS = 5 V, VG2S = 4.5 V

Gate1 input capacitance

VDS = 5 V, VG2S = 4 V, f = 1 MHz

Cg1ss

Output capacitance

VDS = 5 V, VG2S = 4 V, f = 100 MHz

Power gain (self biased)

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Noise figure

Cdss

Gp

F

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Gain control range

∆Gp

VDS = 5 V, VG2S = 4 V ... 0 V, f = 800 MHz

Values

Unit

min. typ. max.

26 30

- mS

-

2.4 2.7 pF

-

1.3

-

20 22

- dB

-

1.6 2.1 dB

40 50

-

3

Feb-18-2004

Share Link: