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BF1005SW View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BF1005SW Silicon N-Channel MOSFET Tetrode Infineon
Infineon Technologies Infineon
BF1005SW Datasheet PDF : 5 Pages
1 2 3 4 5
Thermal Resistance
Parameter
Channel - soldering point1)
BF1005S, BF1005SR
BF1005SW
Symbol
Rthchs
BF1005S...
Value
Unit
K/W
370
280
Electrical Characteristics
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 650 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
V(BR)DS
12
-
-V
+V(BR)G1SS 8
-
12
±V(BR)G2SS 8
-
13
+IG1SS
- 100 - µA
±IG2SS
-
-
50 nA
IDSS
-
- 800 µA
IDSO
8
13 16 mA
VG2S(p)
-
1
-V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2
Feb-18-2004
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