BF1105R View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BF1105R Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
VG2
VDS
4.7 nF
Rgen
50 Ω
Vi
10 kΩ
47 µH
4.7 nF
G2
D
BF1105
10 nF
BF1105R
G1 BF1105WR
S
50 Ω
10 nF
R1 =
50 Ω
MGM257
Fig.18 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA
f
(MHz)
S11
MAGNITUDE
(ratio)
ANGLE
(deg)
S21
MAGNITUDE
(ratio)
ANGLE
(deg)
S12
MAGNITUDE
(ratio)
50
100
200
300
400
500
600
700
800
900
1 000
0.994
0.991
0.982
0.968
0.956
0.937
0.918
0.897
0.878
0.858
0.840
−3.8
−7.5
−14.7
−21.7
−28.8
−35.4
−41.8
−48.1
−54.0
−59.9
−65.5
3.060
3.047
3.004
2.932
2.896
2.815
2.735
2.651
2.575
2.482
2.396
175.4
170.9
162.1
153.4
145.3
137.1
129.2
121.5
114.0
106.5
99.5
0.000
0.002
0.003
0.004
0.006
0.007
0.007
0.008
0.008
0.008
0.008
ANGLE
(deg)
86.9
86.1
82.7
79.7
77.8
76.7
76.3
76.7
79.7
82.2
88.0
S22
MAGNITUDE
(ratio)
0.985
0.983
0.980
0.976
0.972
0.967
0.961
0.955
0.948
0.941
0.935
ANGLE
(deg)
−2.1
−4.2
−8.3
−12.1
−16.2
−20.0
−23.7
−27.3
−30.9
−34.4
−37.9
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
1.5
0.674
(deg)
39.7
Rn
(Ω)
37.15
1997 Dec 02
9
|
|
Share Link: 