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BF1105R View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BF1105R
Philips
Philips Electronics Philips
BF1105R Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook,2h5alfpage
ID
(mA)
20
MGM244
VG1 = 1.7 V
1.6 V
1.5 V
15
1.4 V
10
1.3 V
1.2 V
5
1.1 V
1V
0
0
2
4
6
8
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
handbook,4h0alfpage
ID
(mA)
30
20
10
0
0
0.5
MGM245
VG2-S = 4 V 3.5 V
3V
2.5 V
2V
1.5 V
1V
1
1.5
2
2.5
VG1 (V)
VDS = 5 V.
Tj = 25 °C.
Fig.6 Transfer characteristics; typical values.
handbook,4h0alfpage
yfs
(mS)
30
20
MGM246
VG2-S = 4 V
3.5 V
3V
10
2.5 V
2V
0
0
10
20 ID (mA) 30
VDS = 5 V.
Tj = 25 °C.
Fig.7 Forward transfer admittance as a function
of drain current; typical values.
handbook,1h6alfpage
ID
(mA)
12
8
4
(1) (2)(3)
(4) (5)
MGM247
0
0
1
2
3
4
5
VG2-S (V)
(1) VDS = 5 V.
(2) VDS = 4.5 V.
(3) VDS = 4 V.
(4) VDS = 3.5 V.
(5) VDS = 3 V.
Fig.8 Drain current as a function of gate 2
voltage; typical values.
1997 Dec 02
5
 

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