Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient in free air note 1
thermal resistance from junction to soldering point
Note
1. Device mounted on a printed-circuit board.
VALUE
350
200
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
V(BR)G1-SS
V(BR)G2-SS
VG2-S (th)
IDSX
IG1-SS
IG2-SS
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 2-source threshold voltage
self-biasing drain current
gate 1 cut-off current
gate 2 cut-off current
VG1-S = VG2-S = 0; ID = 10 µA
VG2-S = 0; ID = 0; IG1-S = 10 µA
VG1-S = VDS = 0; IG2-S = 10 µA
VG1-S = 5 V; VDS = 5 V; ID = 20 µA
VG2-S = 4 V; VDS = 5 V
VG1-S = 5 V; VG2-S = 0; ID = 0
VG1-S = VDS = 0; VG2-S = 4 V
MIN.
7
7
7
0.3
8
−
−
TYP.
−
−
−
0.8
−
−
−
MAX. UNIT
−
V
−
V
−
V
1.2 V
16 mA
50 nA
20 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
forward transfer admittance pulsed; Tj = 25 °C
25
31
−
mS
Cig1-ss
input capacitance at gate 1 f = 1 MHz
−
2.2 2.7 pF
Cig2-ss
input capacitance at gate 2 f = 1 MHz
−
1.6 −
pF
Coss
output capacitance
f = 1 MHz
−
1.2 −
pF
Crss
reverse transfer capacitance f = 1 MHz
−
25
40
fF
F
noise figure
f = 800 MHz; YS = YS opt
−
1.7 2.5 dB
Gp
power gain
GS = 2 mS; BS = BS opt; GL = 0.5 mS;
−
38
−
dB
BL = BL opt; f = 200 MHz; see Fig.16
GS = 3.3 mS; BS = BS opt; GL = 1 mS;
−
20
−
dB
BL = BL opt; f = 800 MHz; see Fig.17
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
85
−
−
dBµV
fw = 50 MHz; funw = 60 MHz; see Fig.18
input level for k = 1% at 40 dB AGC;
100 −
−
dBµV
fw = 50 MHz; funw = 60 MHz; see Fig.18
1997 Dec 02
4