BF1101 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BF1101 Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook1, 0ha2lfpage
yis
(mS)
10
MGS311
1
10−1
10
bis
gis
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.17 Input admittance as a function of frequency;
typical values.
handbook1, 0ha2lfpage
|yrs|
(mS)
10
ϕ rs
|yrs|
MGS312 −102
ϕ rs
(deg)
−10
1
−1
10
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook1, 0ha2lfpage
|yfs|
(mS)
10
MGS313 −102
ϕ fs
| y fs|
(deg)
ϕ fs
−10
handbook, 1h0alfpage
yos
(mS)
1
MGS314
bos
gos
1
−1
10−1
10
102
f (MHz)
103
10
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.20 Output admittance as a function of
frequency; typical values.
1999 May 14
8
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