Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
40
handbook, halfpage
I G1
(µA)
30
20
10
MGS307
VGG = 5 V
4.5 V
4V
3.5 V
3V
0
0
2
4 VG2-S (V) 6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
handbgoaoikn, h0alfpage
reduction
(dB)
− 10
(3) (2) (1)
MGS308
− 20
− 30
− 40
− 50
0
1
2
3
4
VAGC (V)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.14 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
handbook1,2h0alfpage
Vunw
(dBµV)
110
MGS309
100
(2) (3)
(1)
90
80
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values; see Fig.21.
handbook,2h5alfpage
ID
(mA)
20
(1)
15
(2)
10
(3)
MGS310
5
0
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ. (2) RG1 = 120 kΩ. (3) RG1 = 180 kΩ.
Fig.16 Drain current as a function of gain reduction;
typical values; see Fig.21.
1999 May 14
7