BF1101R View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BF1101R Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage
ID
drain current
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
Ts ≤ 110 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
MIN.
−
−
−
−
−
−65
−
MAX.
7
30
±10
±10
200
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
VALUE
200
UNIT
K/W
250
handPbtoootk, halfpage
(mW)
200
150
100
50
0
0
50
MGL615
100
150
200
Ts (°C)
Fig.4 Power derating curve.
1999 May 14
3
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