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BDX62C View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
BDX62C Silicon PNP Darlington Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
BDX62C Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX62/A/B/C
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 1000(Min)@ IC= -3A
·Complement to Type BDX63/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VCBO
Collector-Base
Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter
Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.15
A
90
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.94 /W
isc Websitewww.iscsemi.cn
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