BDX65B View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

View to exact match

BDX65B

NPN SILICON DARLINGTONS

Comset Semiconductors 

BDX 65, A, B, C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX65

BDX65A

BDX65B

BDX65C

Value

1.5

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

BDX65 60 - -

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=0.1 A, IB=0, L=25mH

BDX65A 80 - -

V

BDX65B 100 - -

BDX65C 120 - -

VCE=30 V

BDX65

-

-

ICEO

Collector Cutoff Current

VCE=40 V

VCE=50 V

BDX65A - -

1 mA

BDX65B - -

VCE=60 V

BDX65C - -

COMSET SEMICONDUCTORS

2/4

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