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BDX34C View Datasheet(PDF) - Bourns, Inc

Part NameDescriptionManufacturer
BDX34C PNP SILICON POWER DARLINGTONS Bourns
Bourns, Inc Bourns
BDX34C Datasheet PDF : 6 Pages
1 2 3 4 5 6
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDX34
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -100 mA IB = 0
(see Note 3)
BDX34A
BDX34B
BDX34C
-60
-80
-100
BDX34D
-120
VCE = -30 V IB = 0
BDX34
-0.5
VCE = -30 V IB = 0
BDX34A
-0.5
VCE = -40 V IB = 0
BDX34B
-0.5
VCE = -50 V IB = 0
BDX34C
-0.5
ICEO
Collector-emitter
cut-off current
VCE = -60 V
VCE = -30 V
IB = 0
IB = 0
TC = 100°C
BDX34D
BDX34
-0.5
-10
VCE = -30 V IB = 0
TC = 100°C
BDX34A
-10
VCE = -40 V IB = 0
TC = 100°C
BDX34B
-10
VCE = -50 V IB = 0
TC = 100°C
BDX34C
-10
VCE = -60 V IB = 0
TC = 100°C
BDX34D
-10
VCB = -45 V IE = 0
BDX34
-1
VCB = -60 V IE = 0
BDX34A
-1
VCB = -80 V IE = 0
BDX34B
-1
VCB = -100 V IE = 0
BDX34C
-1
ICBO
Collector cut-off
current
VCB = -120 V
VCB = -45 V
IE = 0
IE = 0
TC = 100°C
BDX34D
BDX34
-1
-5
VCB = -60 V IE = 0
TC = 100°C
BDX34A
-5
VCB = -80 V IE = 0
TC = 100°C
BDX34B
-5
VCB = -100 V IE = 0
TC = 100°C
BDX34C
-5
VCB = -120 V IE = 0
TC = 100°C
BDX34D
-5
Emitter cut-off
IEBO current
VEB = -5 V IC = 0
-10
VCE = -3 V IC = -4 A
BDX34
750
Forward current
hFE
transfer ratio
VCE = -3 V IC = -4 A
BDX34A
750
VCE = -3 V IC = -3 A
(see Notes 3 and 4) BDX34B
750
VCE = -3 V IC = -3 A
BDX34C
750
VCE = -3 V IC = -3 A
BDX34D
750
VCE = -3 V IC = -4 A
BDX34
-2.5
Base-emitter
VCE = -3 V IC = -4 A
BDX34A
-2.5
VBE(on) voltage
VCE = -3 V IC = -3 A
(see Notes 3 and 4) BDX34B
-2.5
VCE = -3 V IC = -3 A
BDX34C
-2.5
VCE = -3 V IC = -3 A
BDX34D
-2.5
IB = -8 mA IC = -4 A
BDX34
-2.5
Collector-emitter
IB = -8 mA IC = -4 A
BDX34A
-2.5
VCE(sat) saturation voltage
IB = -6 mA IC = -3 A
(see Notes 3 and 4) BDX34B
-2.5
IB = -6 mA IC = -3 A
BDX34C
-2.5
IB = -6 mA IC = -3 A
BDX34D
-2.5
Parallel diode
VEC forward voltage
IE =
-8 A IB = 0
-4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
PRODUCT INFORMATION
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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