BDX54F View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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| BDX54F Datasheet PDF : 0 Pages | |||
BDX53F / BDX54F
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO
Collector Cut-off
Current (IE = 0)
ICBO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-emitter
Saturation Voltage
VCE = 80 V
VCB = 160 V
VEB = 5 V
IC = 50 mA
IC = 2 A
IB =10 mA
VBE(sat)∗
hFE∗
Base-emitter
Saturation Voltage
DC Current Gain
IC = 2 A
IC = 2 A
IC = 3 A
IB =10 mA
VCE = 5 V
VCE = 5 V
VF∗ Parallel Diode Forward IF = 2 A
Voltage
hfe∗ Small Signal Current IC = 0.5 A
Gain
f = 1MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 2 V
Min. Typ.
160
500
150
20
Max.
0.5
0.2
5
2
2.5
2.5
Unit
mA
mA
mA
V
V
V
V
2/4
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