BDW84C View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BDW84C Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDW84/84A/84B/84C/84D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW84
CONDITIONS
MIN TYP. MAX UNIT
-45
BDW84A
-60
V(BR)CEO
Collector-emitter
breakdown voltage
BDW84B IC=-30mA, IB=0
-80
V
BDW84C
-100
BDW84D
-120
VCEsat-1 Collector-emitter saturation voltage IC=-6A ,IB=-12mA
-2.5
V
VCEsat-2 Collector-emitter saturation voltage IC=-15A ,IB=-150mA
-4.0
V
VBE
Base-emitter on voltage
IC=-6A ; VCE=-3V
-2.5
V
BDW84
VCB=-45V, IE=0
TC=150℃
-0.5
-5.0
BDW84A
VCB=-60V, IE=0
TC=150℃
-0.5
-5.0
ICBO
Collector
cut-off current
固I电NC半H导A体NGE SEMICONDUCTOR ICEO
Collector
cut-off current
BDW84B
BDW84C
BDW84D
BDW84
VCB=-80V, IE=0
TC=150℃
VCB=-100V, IE=0
TC=150℃
VCB=-120V, IE=0
TC=150℃
VCE=-30V, IB=0
BDW84A VCE=-30V, IB=0
BDW84B VCE=-40V, IB=0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
-1
mA
BDW84C VCE=-50V, IB=0
BDW84D VCE=-60V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2
mA
hFE-1
DC current gain
IC=-6A ; VCE=-3V
750
20000
hFE-2
DC current gain
IC=-15A ; VCE=-3V
100
VEC
Diode forward voltage
IE=-15A
ton
Turn-on time
toff
Turn-off time
IC =-10 A, IB1 =-IB2=-40 mA
RL=3Ω; VBE(off) =4.2V
Duty Cycle≤2%
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
-3.5
V
0.9
μs
7.0
μs
MAX
0.83
UNIT
℃/W
2
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