datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BDW51B View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
BDW51B Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDW51/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
BDW51
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW51A
BDW51B
IC= 100mA; IB= 0
BDW51C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
VBE(on)
ICBO
Base-Emitter On Voltage
BDW51
Collector
Cutoff Current
BDW51A
BDW51B
BDW51C
BDW51
IC= 5A; VCE= 4V
VCB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150
VCB= 60V; IE= 0
VCB= 60V; IE= 0; TC= 150
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDW51A
BDW51B
VCE= 30V; IB=B 0
VCE= 40V; IB=B 0
BDW51C
VCE= 50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 5A; VCE= 4V
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V
MIN TYP. MAX UNIT
45
60
V
80
100
1.0
V
3.0
V
2.5
V
1.5
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0 mA
2.0 mA
20
150
5
3
MHz
isc Websitewww.iscsemi.cn
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]