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BDW63D View Datasheet(PDF) - Bourns, Inc

Part Name
Description
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BDW63D Datasheet PDF : 5 Pages
1 2 3 4 5
BDW63, BDW63A, BDW63B, BDW63C, BDW63D
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BDW64, BDW64A, BDW64B, BDW64C and
BDW64D
60 W at 25°C Case Temperature
B
6 A Continuous Collector Current
C
Minimum hFE of 750 at 3V, 2 A
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
BDW63
BDW63A
BDW63B
BDW63C
BDW63D
VCBO
VCEO
VEB
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
45
60
80
V
100
120
45
60
80
V
100
120
5
V
6
A
0.1
A
60
W
2
W
50
mJ
-65 to +150
°C
-65 to +150
°C
-65 to +150
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
 

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