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BDW83C View Datasheet(PDF) - Bourns, Inc

Part Name
Description
View to exact match
BDW83C Datasheet PDF : 5 Pages
1 2 3 4 5
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
G Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
G 125 W at 25°C Case Temperature
B
G 15 A Continuous Collector Current
C
G Minimum hFE of 750 at 3 V, 6 A
E
SOT-93 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW83
OBSOLETE Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Operating temperature range
Tstg
Operating free-air temperature range
TA
45
60
80
V
100
120
45
60
80
V
100
120
5
V
15
A
0.5
A
125
W
3.5
W
100
mJ
-65 to +150
°C
-65 to +150
°C
-65 to +150
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
1
 

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