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BDW83C(2002) View Datasheet(PDF) - Bourns, Inc

Part Name
Description
View to exact match
BDW83C
(Rev.:2002)
Bourns
Bourns, Inc Bourns
BDW83C Datasheet PDF : 5 Pages
1 2 3 4 5
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW83
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
(see Note 5)
BDW83A
60
BDW83B
80
BDW83C
100
BDW83D
120
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
Emitter cut-off
IEBO current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
Forward current
hFE
transfer ratio
VCE = 3 V
VCE = 3 V
IC = 6 A
IC = 15 A
(see Notes 5 and 6)
750
100
Base-emitter
VBE(on) voltage
VCE = 3 V
IC = 6 A
(see Notes 5 and 6)
VCE(sat)
VEC
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IB = 12 mA
IB = 150 mA
IE = 15 A
IC = 6 A
IC = 15 A
IB = 0
(see Notes 5 and 6)
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
2
20000
2.5
2.5
4
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
0.83 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff
Turn-off time
IC = 10 A
VBE(off) = -4.2 V
IB(on) = 40 mA
RL = 3
IB(off) = -40 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.9
µs
7
µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
 

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