datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BDW73C View Datasheet(PDF) - Power Innovations

Part Name
Description
View to exact match
BDW73C
Power-Innovations
Power Innovations Power-Innovations
BDW73C Datasheet PDF : 6 Pages
1 2 3 4 5 6
BDW73, BDW73A, BDW73B, BDW73C, BDW73D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VEB = 5 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 12 mA
IB = 80 mA
IE =
8A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = 3 A
IC = 8 A
IC = 3 A
IC = 3 A
IC = 8 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW73
45
BDW73A
60
BDW73B
80
BDW73C
100
BDW73D
120
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
750
(see Notes 5 and 6)
100
(see Notes 5 and 6)
(see Notes 5 and 6)
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
5
5
5
5
2
20000
2.5
2.5
4
3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton
Turn-on time
toff
Turn-off time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10
IB(off) = -12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]