datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

BDW54A View Datasheet(PDF) - Power Innovations Ltd

Part NameDescriptionManufacturer
BDW54A PNP SILICON POWER DARLINGTONS POINN
Power Innovations Ltd POINN
BDW54A Datasheet PDF : 6 Pages
1 2 3 4 5 6
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VEB = -5 V
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -30 mA
IB = -40 mA
IE = -4 A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -1.5 A
IC = -4 A
IC = -1.5 A
IC = -1.5 A
IC = -4 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-45
-60
-80
-100
-120
750
100
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
-2
20000
-2.5
-2.5
-4
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton
Turn-on time
toff
Turn-off time
IC = -2 A
VBE(off) = 5 V
IB(on) = -8 mA
RL = 15
IB(off) = 8 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
4.5
µs
PRODUCT INFORMATION
2
Direct download click here
 

Share Link : POINN
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]