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BD810 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталогеBD810 ON-Semiconductor
ON Semiconductor ON-Semiconductor
Компоненты Описание10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD810 Datasheet PDF : 5 Pages
1 2 3 4 5
BD809 (NPN), BD810 (PNP)
NPN
BD809
500
TJ = 150°C
200
25°C
100
-ā55°C
50
PNP
BD810
500
200
TJ = 150°C
25°C
100
-ā55°C
50
20
20
10
VCE = 2.0 V
10
VCE = 2.0 V
5.0
0.2
0.5
1.0
2.0
5.0
10
20
5.0
0.2
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
5.0
2.0
TJ = 25°C
1.8
TJ = 25°C
1.6
IC = 1.0 A
1.4
1.2
1.0
IC = 1.0 A
4.0 A
8.0 A
0.8
4.0 A
8.0 A
0.6
0.4
0.2
10
20 50 100
200 500 1000 2000 5000
0
5.0 10
20 50 100
200 500 1000 2000 5000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
2.8
2.8
2.4
TJ = 25°C
2.0
2.4
TJ = 25°C
2.0
1.6
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
0.4
VBE @ VCE = 2.0 V
5.0
10
20
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
http://onsemi.com
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Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 

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