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BD810 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталогеBD810 ON-Semiconductor
ON Semiconductor ON-Semiconductor
Компоненты Описание10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD810 Datasheet PDF : 5 Pages
1 2 3 4 5
BD809 (NPN), BD810 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Sustaining Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Saturation Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base-Emitter On Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 4.0 Adc, VCE = 2.0 Vdc)
Current-Gain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Symbol
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Min
Max
Unit
-
Vdc
80
-
mAdc
-
1.0
-
2.0
mAdc
30
-
15
-
-
1.1
-
1.6
1.5
-
Vdc
Vdc
MHz
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
.5 ms
10
5 ms 1 ms
1 ms
3
dc
1
0.3
0.1
1
3
10
30
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
90
80
70
60
50
40
30
20
10
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 2. Power-Temperature Derating Curve
http://onsemi.com
2
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Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 

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