datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BD810 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
BD810 Datasheet PDF : 5 Pages
1 2 3 4 5
BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
Features
ăDC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
ăPb-Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Value
80
80
5.0
10
6.0
90
720
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg -ā55 to +150 °C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
1.39
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
10 AMPERE
POWER TRANSISTORS
80 VOLTS
90 WATTS
123
TO-220AB
CASE 221A-09
STYLE 1
MARKING DIAGRAM
BD8xxG
AY WW
BD8xx =
A
=
Y
=
WW =
G
=
Device Code
x = 09 or 10
Assembly Location
Year
Work Week
Pb-Free Package
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 4
Publication Order Number:
BD809/D
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]