BD131 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
| BD131 Datasheet PDF : 0 Pages | |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD131
DESCRIPTION
·Complement to type BD132
·With TO-126 package
·High current (Max: 3A)
·Low voltage (Max: 45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter -base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IBM
Base current-Peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb≤60℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal resistance from junction to ambient
Rth j-mb Thermal resistance from junction to mounting base
·
VALUE
70
45
6
3
6
0.5
15
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
VALUE
100
6
UNIT
K/W
K/W
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