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BD139-TM3-T View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
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BD139-TM3-T
UTC
Unisonic Technologies UTC
BD139-TM3-T Datasheet PDF : 3 Pages
1 2 3
BD139
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1.5
A
Peak Collector Current
ICM
2
A
Peak Base Current
lBM
1
A
TO-126
Power Dissipation (Ta=25°C)
TO-251
PD
1.25
W
1
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Cut-Off Current
ICBO
IE=0, VCB=30V
IE=0, VCB=30V, TJ=125°C
100 nA
10 μA
Emitter Cut-Off Current
IEBO IC=0, VEB=5V
100 nA
IC=5mA
40
DC Current Gain
VCE=2V (See Fig.1) IC =150mA 63
250
hFE
IC =500mA 25
DC Current Gain
BD139-10
BD139-16
IC =150mA, VCE=2V
(See Fig.1)
63
160
100
250
Collector-Emitter Saturation Voltage VCE(SAT) IC =500 mA, IB=50mA
0.5
V
Base-Emitter Voltage
VBE IC =500 mA, VCE=2V
1
V
Transition Frequency
fT IC =500 mA, VCE=5V, f=100MHz
190
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R204-007.B
 

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