BD131 View Datasheet(PDF) -

Philips Semiconductors

NPN power transistor

FEATURES

• High current (max. 3 A)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose power applications.

DESCRIPTION

NPN power transistor in a TO-126; SOT32 plastic

package. PNP complement: BD132.

Product specification

BD131

PINNING

PIN

1

2

3

DESCRIPTION

emitter

collector, connected to metal part of

mounting surface

base

handbook, halfpage

2

3

1

1 2 3 Top view

MAM254

Fig.1 Simplified outline (TO-126; SOT32)

and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tmb ≤ 60 °C

MIN.

−

−

−

−

−

−

−

−65

−

−65

MAX.

70

45

6

3

6

0.5

15

+150

150

+150

UNIT

V

V

V

A

A

A

W

°C

°C

°C

1999 Apr 12

2

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