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BCX52-AE View Datasheet(PDF) - Zetex => Diodes

Part NameBCX52-AE Zetex
Zetex => Diodes Zetex
DescriptionSOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX52-AE Datasheet PDF : 1 Pages
1
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
7
COMPLEMENTARY TYPE – BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
PARTMARKING DETAILS –
BCX51
BCX52
BCX53
C
BCX51 – AA
BCX51-10 – AC
BCX51-16 – AD
BCX52 – AE
BCX52-10 – AG
BCX52-16 – AM
BCX53 – AH
BCX53-10 – AK
BCX53-16 – AL
E
C
B
ABSOLUTE MAXIMUM RATINGS.
SOT89
PARAMETER
SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage
VCBO
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1.5
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown
Voltage
BCX53
BCX52
BCX51
Collector-Emitter BCX53
Breakdown
BCX52
Voltage
BCX51
Emitter-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-100
-60
-45
-80
-60
-45
-5
V
IC =-100µA
V
IC =-100µA
V
IC =-100µA
V
IC =-10mA*
IC =-10mA*
IC =-10mA*
V
IE =-10µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-0.1 µA
-20 µA
-20 nA
-0.5 V
VCB =-30V
VCB =-30V, Tamb =150°C
VEB =-4V
IC =-500mA, IB =-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.0 V
IC =-500mA, VCE =-2V*
Static Forward Current
hFE
25
Transfer Ratio
40
25
-10
63
-16
100
Transition Frequency
fT
150
IC =-5mA, VCE =-2V*
250
IC =-150mA, VCE =-2V*
IC =-500mA, VCE =-2V*
160
IC =-150mA, VCE =-2V*
250
IC =-150mA, VCE =-2V*
MHz IC =-50mA, VCE =-10V,
f=100MHz
Output Capacitance
Cobo
25
pF
VCB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
3 - 34
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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

COMPLEMENTARY TYPE –
              BCX51 – BCX54
              BCX52 – BCX55
              BCX53 – BCX56

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