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BCW61D View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
BCW61D PNP general purpose transistors NXP
NXP Semiconductors. NXP
BCW61D Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BCW61 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
BCW61B
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tamb = 150 °C
IC = 0; VEB = 4 V
IC = 10 μA; VCE = 5 V
BCW61C
BCW61D
DC current gain
BCW61B
IC = 2 mA; VCE = 5 V
BCW61C
BCW61D
DC current gain
BCW61B
IC = 50 mA; VCE = 1 V
BCW61C
BCW61D
collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
IC = 50 mA; IB = 1.25 mA
base-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
IC = 50 mA; IB = 1.25 mA
base-emitter voltage
IC = 2 mA; VCE = 5 V
IC = 10 μA; VCE = 5 V
IC = 50 mA; VCE = 1 V
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V;
f = 100 MHz; note 1
noise figure
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
30
40
100
180
250
380
80
100
110
60
120
600
0.68
600
100
650
550
720
4.5
11
2
20 nA
20 μA
20 nA
310
460
630
250
550
850
1.05
750
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
6
dB
Note
1. Pulse test: tp 300 μs; δ ≤ 0.02.
1999 Apr 12
3
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