BCW61B View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

View to exact match

BCW61B

PNP General Purpose Amplifier

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

PNP General Purpose Amplifier

BCW61

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-10μA IE=0

-32

V

Collector-emitter breakdown voltage V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Emitter cut-off current

DC current gain

IEBO

BCW61B

BCW61C hFE

BCW61D

Collector-emitter saturation voltage VCE(sat)

Base-emitter saturation voltage

VBE(sat)

Transition frequency

fT

IC=-10mA IB=B 0

-32

V

IE=-1μA IC=0

-5

μV

VCB=-32V IE=0

-20 nA

VCB=-4V IE=0

-20 nA

180 310

VCE=-5V IC=-2mA

250 460

380 630

IC=-10mA IB=B -0.25mA

IC=-50mA IB=B -1.25mA

-60 -250

mV

-120 -550

IC=-10mA IB=B -0.25mA -600 -850 mV

IC=-50mA IB=B -1.25mA -0.68 -1.05 V

VCE=-5V

IC=-10mA 100

pF

f=100MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC105

Rev.A

www.galaxycn.com

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