datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BCW66KF View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BCW66KF
Infineon
Infineon Technologies Infineon
BCW66KF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BCW66
Thermal Resistance
Parameter
Junction - soldering point1)
BCW66
BCW66K
Symbol
RthJS
Value
Unit
K/W
215
≤ 70
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 45
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 75
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector-base cutoff current
VCB = 45 V, IE = 0
I CBO
-
- 0.02
VCB = 45 V, IE = 0 , TA = 150 °C
-
-
20
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain2)
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
IC = 100 mA, VCE = 1 V, hFE-grp.F
IC = 100 mA, VCE = 1 V, hFE-grp.G
IC = 100 mA, VCE = 1 V, hFE-grp.H
IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H
I EBO
hFE
-
-
20
75
-
-
110 -
-
180 -
-
100 160 250
160 250 400
250 350 630
40
-
-
Unit
V
µA
nA
-
Collector-emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
VCEsat
-
IC = 500 mA, IB = 50 mA
-
Base emitter saturation voltage2)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
V
-
0.3
- 0.45
- 1.25
- 1.25
2
2007-04-20
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]