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BCW60BR View Datasheet(PDF) - Zetex => Diodes

Part NameDescriptionManufacturer
BCW60BR NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS Zetex
Zetex => Diodes Zetex
BCW60BR Datasheet PDF : 2 Pages
1 2
BCW60
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 32
V
IC=2mA
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V
IEBO =1µA
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
BCW60C
BCW60D
Transition Frequency
ICES
IEBO
VCE(sat)
VBE(SAT)
VBE
hFE
fT
20
20
nA
µA
VCES
VCES
=32V
=32V
,Tamb=150oC
20
nA
VEBO =4V
0.12 0.35 V
0.20 0.55 V
IC=10mA, IB = 0.25mA
IC= 50mA, IB =1.25mA
0.60 0.70 0.85 V
0.70 0.83 1.05 V
IC=10mA, IB=0.25mA
IC =50mA, IB=1.25mA
0.52
V
0.55 0.65 0.75 V
0.78
V
IC=10µA, VCE=5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
78
120 170 220
50
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
20 145
180 250 310
70
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
40 220
250 350 460
90
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
100 300
380 500 630
100
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
125 250
MHz IC =10mA, VCE =5V
f = 100MHz
Emitter-Base Capacitance
Cebo
Collector-Base Capacitance
Ccbo
Noise Figure
N
8
pF
VEBO=0.5V, f =1MHz
4.5 pF
VCBO=10V, f =1MHz
2
6
dB
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
f=200Hz
Switching times:
Delay Time
td
Rise Time
tr
Turn-on Time
ton
Storage Time
ts
Fall Time
tf
Turn-Off Time
toff
35
ns
50
ns
85 150 ns
400
ns
80
ns
480 800 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5K
VBB =3.6V, RL=990
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