BC847BS
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol Min
Typ
Max Unit
Test Condition
BVCBO
50
—
—
V IC = 100A, IB = 0
BVCEO
45
—
—
V IC = 10mA, IB = 0
BVEBO
6
—
—
V IE = 100A, IC = 0
hFE
200
—
450
— VCE = 5.0V, IC = 2.0mA
VCE(sat)
—
—
100
400
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(sat)
—
755
—
mV IC = 10mA, IB = 0.5mA
VBE(on)
580
665
700
mV VCE = 5.0V, IC = 2.0mA
ICBO
—
—
—
20
nA VCB = 40V
—
5.0
µA VCB = 40V, TA = +125°C
IEBO
—
—
100
nA VEB = 5.0V, IC = 0
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
2.0
3.0
pF VCB = 10V, f = 1.0MHz
CEBO
—
11
—
pF VEB = 0.5V, f = 1.0MHz
Notes:
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
BC847BS
Document number: DS30222 Rev. 13 - 2
2 of 5
www.diodes.com
February 2013
© Diodes Incorporated