BAT54-V-GS08 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
BAT54-V-GS08 Datasheet PDF : 5 Pages
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BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown voltage
IR = 100 µA (pulsed)
V(BR)
30
Leakage current
Pulse test tp < 300 µs, δ < 2 % at
VR = 25 V
IR
IF = 0.1 mA, tp < 300 µs, δ < 2 %
VF
IF = 1 mA, tp < 300 µs, δ < 2 %
VF
Forward voltage
IF = 10 mA, tp < 300 µs, δ < 2 %
VF
IF = 30 mA, tp < 300 µs, δ < 2 %
VF
IF = 100 mA, tp < 300 µs, δ < 2 %
VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Reverse recovery time
IF = 10 mA to IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
V
2
µA
240
mV
320
mV
400
mV
500
mV
800
mV
10
pF
5
ns
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
Tj = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
18867
0.2 0.4 0.6 0.8 1 1.2 1.4
VF - Forward Voltage (V)
Figure 1. Typical Forward Voltage Forward Current vs.
Various Temperatures
14
12
10
8
6
4
2
0
0
18868
4 8 12 16 20 24 28
VR - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage VR
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85508
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.7, 16-Jul-10
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