BAS86-M View Datasheet(PDF) -

BAS86-M

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Reverse breakdown voltage

IR = 10 µA (pulsed)

Leakage current

VR = 40 V

Pulse test tp < 300 µs,

IF = 0.1 mA, δ < 2 %

Pulse test tp < 300 µs,

IF = 1 mA, δ < 2 %

Forward voltage

Pulse test tp < 300 µs,

IF = 10 mA, δ < 2 %

Pulse test tp < 300 µs,

IF = 30 mA, δ < 2 %

Pulse test tp < 300 µs,

IF = 100 mA, δ < 2 %

Diode capacitance

VR = 1 V, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA,

Irr = 1 mA,

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

500

450 VR = 50 V

400

350

300

250

200

150

100 RthJA = 540 K/W

50

PR - Limit

at 100 % VR

PR - Limit

at 80 % VR

0

25

50

75 100 125 150

15827

Tj - Junction Temperature (°C)

Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature

Symbol

Min.

Typ.

Max.

Unit

V(BR)

50

V

IR

5

µA

VF

200

300

mV

VF

275

380

mV

VF

365

450

mV

VF

460

600

mV

VF

700

900

mV

CD

8

pF

trr

5

ns

1000

100

10

1

Tj = 125 °C

Tj = 25 °C

0.1

0

0.5

1.0

1.5

15829

VF - Forward Voltage (V)

Figure 3. Forward Current vs. Forward Voltage

10000

1000

VR = V RRM

100

10

1

25

50

75 100 125 150

15828

Tj - Junction Temperature (°C)

Figure 2. Reverse Current vs. Junction Temperature

10

9

f = 1 MHz

8

7

6

5

4

3

2

1

0

0.1

1

10

100

15830

VR - Reverse Voltage (V)

Figure 4. Diode Capacitance vs. Reverse Voltage

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For technical questions within your region, please contact one of the following: Document Number 83402

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.0, 13-Jan-11

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