BAS86-GS08(2006) View Datasheet(PDF) - Vishay Semiconductors
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Description
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BAS86-GS08 Datasheet PDF : 5 Pages
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BAS86
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 µA (pulsed)
Leakage current
VR = 40 V
Forward voltage
Pulse test tp < 300 µs,
IF = 0.1 mA, δ < 2 %
Pulse test tp < 300 µs,
IF = 1 mA, δ < 2 %
Pulse test tp < 300 µs,
IF = 10 mA, δ < 2 %
Pulse test tp < 300 µs,
IF = 30 mA, δ < 2 %
Pulse test tp < 300 µs,
IF = 100 mA, δ < 2 %
Diode capacitance
VR = 1 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
500
450 VR = 50 V
400
350
300
PR - Limit
250
at 100 % VR
200
150
100 RthJA = 540 K/W
50
PR - Limit
at 80 % VR
0
25
50
75 100 125 150
15827
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
10000
1000
VR = V RRM
100
10
1
25
15828
50
75 100 125 150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
Symbol
Min
Typ.
Max
Unit
V(BR)
50
V
IR
5
µA
VF
200
300
mV
VF
275
380
mV
VF
365
450
mV
VF
460
600
mV
VF
700
900
mV
Ctot
8
pF
trr
5
ns
1000
100
10
Tj = 150 °C
Tj = 25 °C
1
0.1
0
15829
0.5
1.0
1.5
VF - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
10
9
8
7
6
5
4
3
2
1
0
0.1
15830
f = 1 MHz
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Document Number 85511
Rev. 1.7, 03-Mar-06
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