AP90T03GS View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
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AP90T03GS Datasheet PDF : 5 Pages
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Advanced Power
Electronics Corp.
AP90T03GS
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
G
D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@Tc=25℃
ID@Tc=100℃
IDM
PD@Tc=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V3
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
30
±20
75
63
350
96
0.7
-55 to 150
-55 to 150
Value
1.3
62
Units
V
V
A
A
A
W
W/℃
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200802183
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