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IRL540SPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameIRL540SPBF Vishay
Vishay Semiconductors Vishay
Description28A 100V power MOSFET
IRL540SPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRL540S, SiHL540S
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
5V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
5V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
VDS
IAS
VDS
tp
VDD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 90386
S11-1045-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK(TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capabilityand the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES
•Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•RDS(on)Specified at VGS= 4 V and 5 V
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC

 

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