datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :

1N5817RLG View Datasheet(PDF) - ON Semiconductor

Part Name1N5817RLG ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817RLG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
30
40
V
VRWM
VR
Non−Repetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1), (VR(equiv) 0.2 VR(dc), TL = 90°C,
IO
RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
1.0
A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W)
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, TL = 70°C)
TA
IFSM
85
80
75
°C
25 (for one cycle)
A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
−65 to +125
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
80
°C/W
Characteristic
Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 0.1 A)
vF
(iF = 1.0 A)
(iF = 3.0 A)
0.32
0.33
0.34
V
0.45
0.55
0.6
0.75
0.875
0.9
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
IR
(TL = 25°C)
(TL = 100°C)
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
mA
1.0
1.0
1.0
10
10
10
http://onsemi.com
2
Direct download click here
 

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

Features
• Extremely Low VF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• These are Pb−Free Devices*

Share Link : ON-Semiconductor
@ 2014 - 2018  [ Home ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]