1N5817RL View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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1N5817RL Datasheet PDF : 7 Pages
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1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
30
40
V
VRWM
VR
Non−Repetitive Peak Reverse Voltage
VRSM
24
36
48
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
IO
RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
1.0
A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W)
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, TL = 70°C)
TA
IFSM
85
80
75
°C
25 (for one cycle)
A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
−65 to +125
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
80
°C/W
Characteristic
Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 0.1 A)
vF
(iF = 1.0 A)
(iF = 3.0 A)
0.32
0.33
0.34
V
0.45
0.55
0.6
0.75
0.875
0.9
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
IR
(TL = 25°C)
(TL = 100°C)
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
mA
1.0
1.0
1.0
10
10
10
http://onsemi.com
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