AOD442 View Datasheet(PDF) - Unspecified
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AOD442 Datasheet PDF : 6 Pages
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AOD442/AOI442
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.6 2.1 2.7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
16
20
mΩ
31
37
VGS=4.5V, ID=20A
20
25 mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
65
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
1
V
IS
Maximum Body-Diode Continuous Current
32
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1535 1920 2300 pF
108 155 200 pF
70 116 165 pF
0.3 0.65 0.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
38 47.6 68 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=30V, ID=20A
20 24.2 30 nC
4.8
6
7
nC
Qgd
Gate Drain Charge
8.5 14.4 20 nC
tD(on)
Turn-On DelayTime
7.4
ns
tr
Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5Ω,
5.1
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
28.2
ns
tf
Turn-Off Fall Time
5.5
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
34
41
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
46
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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