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AOD498 View Datasheet(PDF) - Alpha and Omega Semiconductor

Part NameDescriptionManufacturer
AOD498 100V N-Channel MOSFET AOSMD
Alpha and Omega Semiconductor AOSMD
AOD498 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AOD498
100V N-Channel MOSFET
General Description
The AOD498 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
100V
11A
< 140m
< 152m
TO252
DPAK
Top View
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
G
S
Maximum
100
±20
11
8
20
2.5
2
8
3
45
23
2.1
1.3
-55 to 175
Typ
Max
17
25
50
60
2.7
3.3
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: August 2012
www.aosmd.com
Page 1 of 6
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