AO4611 View Datasheet(PDF) - Unspecified
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AO4611 Datasheet PDF : 7 Pages
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AO4611
60V Dual P + N-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
IDSS
Zero Gate Voltage Drain Current
VDS=-48V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
VGS=-10V, ID=-4.9A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4.4A
gFS
Forward Transconductance
VDS=-5V, ID=-4.9A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-4.9A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=6.2Ω,
RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-4.9A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs
Typ Max Units
V
-1
µA
-5
±100 nA
-1.9 -3
V
A
34
42
mΩ
58
72
42
52 mΩ
17.8
S
-0.73 -1
V
-3
A
2417 2900 pF
179
pF
120
pF
1.9 2.3
Ω
45.2 55 nC
22.8 28 nC
5.8
nC
9.6
nC
9.8
ns
6.1
ns
44
ns
12.7
ns
32
42
ns
42
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any agigvievnenapaplpicliactaiotinondedpeepnednsdsononthteheusuesre'sr'sspsepceicficficbobaoradrddedseisging.nT. Thehecucrurrernetnrtartaintigngisisbabsaesdedononthtehet t ≤≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8<030µ0sµpsulpsuels,edsu, tdyuctyycclyec0le.50%.5%mamx.ax.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev5: Nov. 2010
5/7
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