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AO4611 View Datasheet(PDF) - Unspecified

Part NameDescriptionManufacturer
AO4611 60V Dual P + N-Channel MOSFET SHENZHENFREESCALE
Unspecified 
AO4611 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
AO4611
60V Dual P + N-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
IDSS
Zero Gate Voltage Drain Current
VDS=-48V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
VGS=-10V, ID=-4.9A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4.4A
gFS
Forward Transconductance
VDS=-5V, ID=-4.9A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-4.9A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=6.2,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-4.9A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs
Typ Max Units
V
-1
µA
-5
±100 nA
-1.9 -3
V
A
34
42
m
58
72
42
52 m
17.8
S
-0.73 -1
V
-3
A
2417 2900 pF
179
pF
120
pF
1.9 2.3
45.2 55 nC
22.8 28 nC
5.8
nC
9.6
nC
9.8
ns
6.1
ns
44
ns
12.7
ns
32
42
ns
42
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any agigvievnenapaplpicliactaiotinondedpeepnednsdsononthteheusuesre'sr'sspsepceicficficbobaoradrddedseisging.nT. Thehecucrurrernetnrtartaintigngisisbabsaesdedononthtehet t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8<030µ0sµpsulpsuels,edsu, tdyuctyycclyec0le.50%.5%mamx.ax.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev5: Nov. 2010
5/7
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